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| SSG4913 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS(ON) 130 m RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free DESCRIPTIONS & FEATURES The SSG4913 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Simple Drive Requirement Lower On-resistance Fast Switching Performance SOP-8 B L D M PACKAGE INFORMATION Weight: 0.07936g A C N J K MARKING CODE D1 D1 D2 D2 H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0 8 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N F Millimeter E Drain1 78 Drain2 56 REF. A B C D E F G 4913SS 1 S1 G1 S2 G2 = Date Code 2 Gate1 4 Gate2 1 Source1 3 Source2 Min. Max. 0.35 0.49 0.375 REF. 45 1.35 1.75 0.10 0.25 0.25 REF. ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Symbol Ratings -20 8 -3.5 -2.8 -18 2 -55 ~ +150 0.02 Unit V V A A A W W/ VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Operating Junction and Storage Temperature Range TJ, TSTG Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient3 Max Symbol RJ-AMB Value 62.5 Unit /W 01-December-2008 Rev. A Page 1 of 4 SSG4913 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS(ON) 130 m ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS /TJ VGS(th) Min. -20 -0.4 - Typ. -0.028 6.5 6 0.8 1.3 6.5 20 31 21 405 170 45 Max. -1.0 100 -1 -25 130 180 8.5 - Unit V V / C V S nA uA uA m nC Test Conditions VGS = 0, ID = -250 uA Reference to 25C, ID = -250 A Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25) Drain-Source Leakage Current(Tj=70) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = VGS, ID = -250 A VDS = -5 V, ID = -3.5 A VGS = 8 V VDS = -16 V, VGS = 0 VDS = -12 V, VGS = 0 VGS = -4.5 V, ID = -3.5 A VGS = -2.5 V, ID = -3.0 A ID = -3.5 A VDS = -5 V VGS = -4.5 V VDD = -5 V ID = -1 A VGS = -4.5 V RG = 6 VGS = 0 V VDS = -10 V f = 1.0 MHz ns pF SOURCE-DRAIN DIODE Parameter Forward On Voltage Continuous Source Current (Body Diode) Notes: 2 Symbol VSD IS Min. - Typ. - Max. -1.2 -2.1 Unit V A Test Conditions IS= -2.1 A, VGS=0V VD = VG = 0 V, VS = -1.2 V 1. Pulse width limited by Max. junction temperature. 2. Pulse width300us, duty cycle2%. 01-December-2008 Rev. A Page 2 of 4 SSG4913 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS(ON) 130 m CHARACTERISTIC CURVE 01-December-2008 Rev. A Page 3 of 4 SSG4913 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS(ON) 130 m CHARACTERISTIC CURVES (cont'd) 01-December-2008 Rev. A Page 4 of 4 |
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